Datasheet4U Logo Datasheet4U.com

IXFB110N60P3 - Power MOSFET

Features

  • Avalanche Rated.
  • Low Package Inductance.
  • Fast Intrinsic Rectifier.
  • Low RDS(on) and QG Advantages.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXFB150N65X2 Power MOSFET IXYS
IXFB44N100P Power MOSFET Littelfuse
IXFB44N100P N-Channel Power MOSFET IXYS
IXFB70N100X Power MOSFET IXYS
IXFB72N55Q2 Power MOSFET IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFB100N50P Power MOSFET
IXFB100N50Q3 HiperFET Power MOSFET Q3-Class
IXFB120N50P2 PolarP2 HiPerFET Power MOSFET
IXFB132N50P3 Polar3 HiPerFET Power MOSFET
IXFB170N30P Polar Power MOSFET HiPerFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Polar3TM HiPerFETTM Power MOSFET IXFB110N60P3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 600 V 600 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 110 275 55 3 35 1890 -55 ... +150 150 -55 ... +150 A A A J V/ns W C C C Maximum Lead Temperature for Soldering Plastic Body for 10s 300 °C 260 °C Mounting Force 30..120/6.7..
Published: |