IXFA4N100Q
IXFA4N100Q is Power MOSFET manufactured by IXYS.
Features g g
- IXYS advanced low Qg process
- Low gate charge and capacitances
- easier to drive
- faster switching
- International standard packages
- Low RDS (on)
- Rated for unclamped Inductive load Switching (UIS)
- Molding epoxies meet UL 94 V-0 flammability classification
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 3.0 5.0 ±100 TJ = 25°C TJ = 125°C 50 1 3.0 V V n A m A m A W
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1 m A VDS = VGS, ID = 1.5 m A VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V
Advantages
- Easy to mount
- Space savings
- High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
98705 (02/04/00)
© 2000 IXYS All rights reserved
1-4
IXFA 4N100Q IXFP 4N100Q
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1.5 2.5 1050 VGS = 0 V, VDS = 25 V, f = 1 MHz 120 30 17 VGS = 10 V, VDS = 0.5
- VDSS, ID = 0.5
- ID25 RG = 4.7 W (External), 15 32 18 39 VGS = 10 V, VDS = 0.5
- VDSS, ID = 0.5
- ID25 9 22 0.8 (TO-220) 0.25 S p F p F p F ns ns ns ns n C n C n C K/W K/W
Dim. A B C D E F G H J K M N Q R Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110
TO-220 AB (IXFP) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth CK
VDS = 20 V; ID = 0.5
- ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 4 16 1.5 A A V
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2...