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IXFA4N100P - Power MOSFET

Download the IXFA4N100P datasheet PDF. This datasheet also covers the IXFP4N100P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z z z z z G S D (Tab) TO-220AB (IXFP) G DS D (Tab) G = Gate S = Source D = Drain Tab = Drain 1.6mm (0.062in. ) from Case for 10s Plastic Body for 10 Seconds Mounting Force (TO-263) Mounting Torque (TO-220) TO-263 TO-220 300 260 10.65 / 2.2..14.6 1.13 / 10 2.5 3.0 International Standard Packages Low RDS(on) and QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VG.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFP4N100P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFA4N100Q Power MOSFET
IXFA4N100Q Power MOSFET
IXFA102N15T Power MOSFET
IXFA10N60P Polar MOSFET
IXFA10N80P Power MOSFET

Full PDF Text Transcription

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PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA4N100P IXFP4N100P VDSS ID25 RDS(on) = 1000V = 4A ≤ 3.3Ω TO-263 AA (IXFA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold FC Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1000 1000 ±20 ±30 4 8 4 200 10 150 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. Nm/lb.in. g g Features z z z z z G S D (Tab) TO-220AB (IXFP) G DS D (Tab) G = Gate S = Source D = Drain Tab = Drain 1.6mm (0.062in.
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