Datasheet Summary
Advanced Technical Information
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NPT3 IGBT with Diode in ISOPLUS 247TM
IXER 35N120D1 IC25
VCES VCE(sat) typ.
= 50 A = 1200 V = 2.2 V
ISOPLUS 247TM E153432
E G = Gate
Isolated Backside- C = Collector E = Emitter
- Patent pending
IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 90°C VGE = ±15 V; RG = 39 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = 900V; VGE = ±15 V; RG = 39 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 50 32 50 VCES 10 200 V V A A A µs W
Features
- NPT3 IGBT
- low saturation voltage
- positive temperature coefficient for easy paralleling
- fast...