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IXYX120N120B3 - IGBT

Download the IXYX120N120B3 datasheet PDF. This datasheet also covers the IXYK120N120B3 variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • Square RBSOA.
  • International Standard Packages.
  • Positive Thermal Coefficient of Vce(sat).
  • Avalanche Rated.
  • High Current Handling Capability Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXYK120N120B3-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
1200V XPTTM IGBT GenX3TM High-Speed IGBT for 10-30 kHz Switching Advance Technical Information IXYK120N120B3 IXYX120N120B3 VCES = 1200V IC110 = 120A VCE(sat)  2.2V tfi(typ) = 260ns TO-264P (IXYK) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 1200 1200 ±20 ±30 V V V V TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 1 Clamped Inductive Load TC = 25°C 320 160 120 800 60 2 ICM = 240 VCE VCES 1500 -55 ... +175 175 -55 ... +175 A A A A A J A W °C °C °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.
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