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IXTY1R4N60P - Power MOSFET

Download the IXTY1R4N60P datasheet PDF. This datasheet also covers the IXTU1R4N60P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • International Standard Packages.
  • Low QG.
  • Avalanche Rated.
  • Low Package Inductance.
  • Fast Intrinsic Rectifier Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTU1R4N60P_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTY1R4N60P N-Channel MOSFET INCHANGE
IXTY1R4N100P N-Channel MOSFET INCHANGE
IXTY1R6N100D2 N-Channel MOSFET IXYS Corporation
IXTY1R6N50D2 N-Channel MOSFET IXYS Corporation
IXTY1R6N50P N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTY1R4N100P Power MOSFET
IXTY1R4N120P Power MOSFET
IXTY1R4N120PHV Power MOSFET
IXTY1R6N50P Power MOSFET
IXTY12N06T Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU1R4N60P IXTY1R4N60P IXTP1R4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-251 TO-252 TO-220 Maximum Ratings 600 V 600 V 30 V 40 V 1.4 A 2.1 A 1.4 A 75 mJ 10 V/ns 50 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in 0.40 g 0.35 g 3.
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