IXTT16N10D2, IXTH16N10D2 Datasheet - IXYS

IXTT16N10D2 Depletion Mode MOSFET

Advance Technical Information Depletion Mode MOSFET IXTH16N10D2 IXTT16N10D2 VDSX ID(on) RDS(on) = > ≤ 100V 16A 64mΩ N-Channel TO-247 (IXTH) Symbol VDSX VDGX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Maximum Ratings 100 100 ±20 ±30 695 - 55 +150 150 - 55 +150 V V V V W °C °C °C °C °C Nm/lb.in. g g G D S D (Tab) TO-268 (IXTT) G S D (Tab) 1.6mm (0.062 in.) from Case for 10s Plastic Bod.

IXTT16N10D2 Features

* Normally ON Mode

* International Standard Packages

* Molding Epoxies Meet UL 94 V-0 Flammability Classification Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSX VGS(off) IGSX IDSX(off) RDS(on) ID(on) VGS = - 5V, ID = 250μA VDS = 25V, ID = 1mA VGS = ±20V,

IXTH16N10D2_IXYS.pdf