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IXTP64N055T - Power MOSFET

Features

  • Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density.

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Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTP64N055T IXTY64N055T VDSS ID25 = = RDS(on) ≤ 55 V 64 A 13 mΩ TO-220 (IXTP) G D (TAB) D S Symbol V DSS VDGR VGSM ID25 IL IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Package Current Limit, RMS TO-252 TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 18 Ω TC = 25°C Maximum Ratings 55 55 ± 20 64 25 170 10 250 3 130 -55 ... +175 175 -55 ...
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