Download the IXTP110N055T2 datasheet PDF.
This datasheet also covers the IXTA110N055T2 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
International Standard Packages.
Avalanche Rated.
Low Package Inductance.
Fast Intrinsic Rectifier
175°C Operating Temperature.
High Current Handling Capability.
ROHS Compliant.
High Performance Trench
Technology for extremely low RDS(on)
Advantages.
Full PDF Text Transcription for IXTP110N055T2 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXTP110N055T2. For precise diagrams, and layout, please refer to the original PDF.
TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA110N055T2 IXTP110N055T2 Symbol VDSS VDGR VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight ...
View more extracted text
l VDSS VDGR VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions Maximum Ratings TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Transient 55 V 55 V 20 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C 110 300 50 400 180 -55 ... +175 175 -55 ... +175 A A A mJ W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 2.5 g 3.
IXTP110N055T2 Datasheet
