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IXTH03N400 - High Voltage Power MOSFETs

Features

  • z International Standard Packages z Fast Intrinsic Rectifier z Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages z Easy to Mount z Space Savings z High Power Density.

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High Voltage Power MOSFETs Preliminary Technical Information IXTH03N400 IXTV03N400S VDSS = ID25 = ≤ RDS(on) 4000V 300mA 290Ω N-Channel Enhancement Mode Fast Intrinsic Rectifier TO-247 (IXTH) Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) Mounting Force (PLUS220) PLUS220 TO-247 Maximum Ratings 4000 V 4000 V ±20 V ±30 V 300 mA 800 mA 130 W - 55 ... +150 °C 150 °C - 55 ... +150 °C 300 °C 260 °C 1.13 / 10 11..65 / 25..14.6 4 6 Nm/lb.in. N/lb.