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IXTA1N100P - Power MOSFET

Download the IXTA1N100P datasheet PDF. This datasheet also covers the IXTY1N100P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • International Standard Packages.
  • Low QG.
  • Avalanche Rated.
  • Low Package Inductance.
  • Fast Intrinsic Rectifier Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTY1N100P-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTA1N100P TO-263 N-Channel MOSFET INCHANGE
IXTA1N100 High Voltage MOSFET IXYS Corporation
IXTA1N100 N-Channel MOSFET INCHANGE
IXTA100N04T2 N-Channel MOSFET INCHANGE
IXTA102N15T N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTA1N170DHV N-Channel MOSFET
IXTA1N200P3HV High Voltage Power MOSFET
IXTA1N80 High Voltage MOSFET
IXTA1N80P Power MOSFET
IXTA100N04T2 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY1N100P IXTA1N100P IXTP1N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1000 V 1000 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 1.0 1.8 1.0 100 10 50 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in TO-252 TO-263 TO-220 0.35 g 2.50 g 3.
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