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IXTA110N055T2 - Power MOSFET

Key Features

  • International Standard Packages.
  • Avalanche Rated.
  • Low Package Inductance.
  • Fast Intrinsic Rectifier 175°C Operating Temperature.
  • High Current Handling Capability.
  • ROHS Compliant.
  • High Performance Trench Technology for extremely low RDS(on) Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

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Full PDF Text Transcription for IXTA110N055T2 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTA110N055T2. For precise diagrams, and layout, please refer to the original PDF.

TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA110N055T2 IXTP110N055T2 Symbol VDSS VDGR VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight ...

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l VDSS VDGR VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions Maximum Ratings TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Transient 55 V 55 V 20 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C 110 300 50 400 180 -55 ... +175 175 -55 ... +175 A A A mJ W  C  C  C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 2.5 g 3.

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