Full PDF Text Transcription for IXTA100N04T2 (Reference)
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Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA100N04T2 IXTP100N04T2 VDSS = 40V ID25 = 100A RDS(on) ≤ 7mΩ TO-263...
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IXTA100N04T2 IXTP100N04T2 VDSS = 40V ID25 = 100A RDS(on) ≤ 7mΩ TO-263 (IXTA) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.
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IXTA100N04T2
N-Channel MOSFET
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IXTA100N04T2 Datasheet
