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IXYS

IXST30N60B2D1 Datasheet Preview

IXST30N60B2D1 Datasheet

High Speed IGBT with Diode

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High Speed IGBT
with Diode
IXSH 30N60B2D1
IXST 30N60B2D1
Short Circuit SOA Capability
Preliminary Data Sheet
www.DataSheet4U.com
VCES = 600 V
IC25 = 48 A
VCE(sat) = 2.5 V
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC110
IF(110)
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
VGE= 15 V, TJ = 125°C, RG = 10
Clamped inductive load
tSC
(SCSOA)
PC
TJ
TJM
Tstg
Weight
VGE = 15 V, VCE = 360 V, TJ = 125°C
RG = 10 Ω, non repetitive
TC = 25°C
TO-247
TO-268
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering for 10s
Maximum Ratings
600
600
± 20
± 30
48
30
28
90
ICM = 48
@ 0.8 VCES
10
V
V
V
V
A
A
A
A
A
µs
250
-55 ... +150
150
-55 ... +150
6
5
300
260
W
°C
°C
°C
g
g
°C
°C
Symbol
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 750 µA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ± 20 V
IC = 24A, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
4.0 7.0 V
150 µA
1 mA
± 100
2.5
nA
V
TO-247 (IXSH)
GCE
TO-268 (IXST)
C (TAB)
GE
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
• International standard package
• Guaranteed Short Circuit SOA
capability
Low
- for
VloCwE(soatn) -state
conduction
losses
• High current handling capability
• MOS Gate turn-on
- drive simplicity
• Fast fall time for switching speeds
up to 20 kHz
Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Welding
Advantages
• High power density
© 2004 IXYS All rights reserved
DS99249(10/04)




IXYS

IXST30N60B2D1 Datasheet Preview

IXST30N60B2D1 Datasheet

High Speed IGBT with Diode

No Preview Available !

Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCS
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 24A; VCE = 10 V, Note 1
VCE = 25 V, VGE = 0 V
f = 1 MHz
20N60B2D1
7.0 12.0
1220
110
140
42
IC = 24A, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = 24A, VGE = 15 V
VCE = 400 V, RG = 5
Switching
(Clamp) >
times may
0.8 • VCES,
increase
higher TJ
for
or
VCE
increased RG
50
23
15
30
30
130
140
0.55
Inductive load, TJ = 125°C
IC = 24 A, VGE = 15 V
20N60B2
VSwCEit=ch4i0n0g
Vtim, ReGs
=5
may increase
for
20N60B2D1
oVrCEin(cCrleaamspe)d
> 0.8
RG
VCES,
higher
TJ
30
50
0.32
0.82
202
234
1.18
S
pF
pF
pF
pF
nC
nC
nC
ns
ns
280 ns
300 ns
1.0 mJ
ns
ns
mJ
mJ
ns
ns
mJ
0.50 K/W
0.21
K/W
IXSH 30N60B2D1
IXSTwww3.D0aNta6Sh0eeBt42U.Dco1m
TO-247 (IXSH) Outline
123
Terminals: 1 - Gate
2 - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
AA12
2.2 2.54
2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
TO-268 (IXST) Outline
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF IF = 30A, VGE = 0 V
TJ =150°C
1.6 V
2.5 V
IRM
IF = 50A, VGE = 0 V, -diF/dt = 100 A/µs
TJ = 100°C 2.0 2.5 A
trr VR = 100 V
TJ = 100°C 150
ns
trr IF = 1 A; -di/dt = 100 A/µs; VR = 30 V
RthJC
Note 1: Pulse test, t 300 µs, duty cycle d 2 %
30 ns
0.9 K/W
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692


Part Number IXST30N60B2D1
Description High Speed IGBT with Diode
Maker IXYS
Total Page 6 Pages
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