Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface Optimized for Low Conduction and Switching Losses 2500V~ Electrical Isolation Square RBSOA A.

Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250A, VCE = VGE TJ = 125.

IXGR72N60A3

IXGR72N60C3D1

IXGR120N60B

IXGR120N60C2

IXGR16N170AH1

IXGR24N60C

IXGR32N170AH1

IXGR32N170H1

IXGR32N60CD1

IXGR32N90B2D1

IXGR35N120B

IXGR35N120C

IXGR40N60B2

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts