z Silicon Chip on Direct-Copper Bond (DCB) Substrate Optimized for Low Switching Losses Square RBSOA Isolated Mounting Surface Anti-Parallel Ultra Fast Diode High Speed .

Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250μA, VCE = VGE VCE = VC.

IXGR60N60C2

IXGR60N60C2D1

IXGR60N60B2

IXGR60N60B2D1

IXGR60N60U1

IXGR120N60B

IXGR120N60C2

IXGR16N170AH1

IXGR24N60C

IXGR32N170AH1

IXGR32N170H1

IXGR32N60CD1

IXGR32N90B2D1

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