z G C ( TAB ) E C = Collector TAB = Collector G = Gate E = Emitter z z z Optimized for Low Conduction and Switching Losses Square RBSOA Anti-Parallel Schottky Diod.

Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC = 250μA, VGE = 0V IC =.

IXGH48N60B3

IXGH48N60A3

IXGH48N60C3

IXGH48N60C3C1

IXGH48N60C3D1

IXGH40N120A2

IXGH40N120B2D1

IXGH40N30

IXGH40N30A

IXGH40N30B

IXGH40N30BD1

IXGH40N60

IXGH40N60A

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