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IXYS

IXFR14N100Q2 Datasheet Preview

IXFR14N100Q2 Datasheet

HiPerFET Power MOSFET

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HiPerFETTM
Power MOSFETs
Electrically Isolated Tab
N-Channel Enhancement Mode
Avalanche Rated, Low Qg
Low Rg, High dv/dt, Low trr
Advanced Technical Data
IXFR14N100Q2
www.DataSheet4U.com
VDSS = 1000 V
ID25 = 9.5 A
RDS(on) =
1.0
trr 300 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IIADRM
EEAARS
dv/dt
PD
TTJJM
Tstg
TL
VISOL
FC
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TTCC
=
=
25°C,
25°C
pulse
width
limited
by
TJM
TTCC
= 25°C
= 25°C
TISJ
I1D5M0, °dCi/d, tRG
100
=2
A/µs,
VDD
VDSS,
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS, t = 1 min
ISOL = 1mA, t = 1 s
Mounting Force
Maximum Ratings
1000
1000
±30
±40
9.5
56
14
V
V
V
V
A
A
A
50 mJ
2.5 J
20 V/ns
200
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300 °C
2500
3000
V~
V~
20..120 / 4.6..27 N/lb
5g
ISOPLUS247 (IXFR)
E153432
G
CE
G = Gate
E = Source
ISOLATED TAB
C = Drain
Features
z Double metal process for low gate
resistance
z Epoxy meet UL 94 V-0, flammability
classification
z Low RDS ,(on) low Qg
z Avalanche energy and current rated
z Fast intrinsic rectifier
Applications
z DC-DC converters
z Switched-mode and resonant-mode
power supplies, >500kHz switching
z DC choppers
z Pulse generation
z Laser drivers
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
VGS = ±30 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = IT
Pulse test, t 300 µs, duty cycle d 2 %
1000
3.0
V
5.0 V
±200 nA
25 µA
1 mA
0.90
Advantages
z Easy to mount
z Space savings
z High power density
© 2004 IXYS All rights reserved
DS99229(11/04)




IXYS

IXFR14N100Q2 Datasheet Preview

IXFR14N100Q2 Datasheet

HiPerFET Power MOSFET

No Preview Available !

IXFR14N100Q2
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = IT , pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
RG = 2 (External),
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
10 14
S
2700
300
100
pF
pF
pF
12 ns
10 ns
28 ns
12 ns
83 nC
20 nC
40 nC
0.62 K/W
RthCK
Note: Test current IT = 7A
0.25
K/W
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
14 A
ISM Repetitive; pulse width limited by TJM
56 A
VSD
IF = IS, VGS
Pulse test,
= 0 V,
t 300
µs,
duty
cycle
d
2
%
trr
QRM
IRM
IF = IS, -di/dt = 100 A/µs, VR = 100 V
1.5 V
300 ns
0.8 µC
0.7 A
www.DataSheet4U.com
ISOPLUS247 Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692


Part Number IXFR14N100Q2
Description HiPerFET Power MOSFET
Maker IXYS
Total Page 4 Pages
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