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IXFR120N25P - PolarHT HiPerFET Power MOSFET

Features

  • z International standard isolated package z UL recognized package z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect 1.6 mm (0.062 in. ) from case for 10 s Plastic body for 10 s 50/60 Hz, RMS, t = 1 minute Mounting force 300 260 2500 20..120 / 4.5..25 5 Advantages z Easy to mount z Space savings z High power density Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PolarHTTM HiPerFET IXFR 120N25P Power MOSFET Electrically Isolated Tab N-Channel Enhancement Mode Preliminary Data Sheet VDSS = 250 V ID25 = 61 A RDS(on) = 27 mΩ www.DataSheet4U.com Symbol VDSS VDGR VDSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ TJ = 25°C to 175°C TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 250 250 ±30 ±20 61 75 300 60 60 2.5 10 250 -55 ... +150 150 -40 ...