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IXYS

IXFN140N20P Datasheet Preview

IXFN140N20P Datasheet

PolarHT HiPerFET Power MOSFET

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Advanced Technical Information
PolarHTTMHiPerFET IXFN 140N20P
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
V = 200 VDSS
www.DataSheet4U.com
I = 140 A
D25
=RDS(on) 18 m
trr 150 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
ID(RMS)
I
DM
I
AR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
VISOL
Md
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 M
Continuous
Transient
TC = 25°C
External lead current limit
T
C
=
25°C,
pulse
width
limited
by
T
JM
T
C
= 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, 1 minute
Terminal torque
Mounting torque
Maximum Ratings
200 V
200 V
±20 V
±30 V
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
140 A
75 A
280 A
60 A
100 mJ
4J
10 V/ns
800
-55 ... +175
175
-55 ... +150
W
°C
°C
°C
300
2500
°C
V~
1.13/10 Nm/lb.in.
1.13/10 Nm/lb.in.
G = Gate
S = Source
D
D = Drain
S
Features
z International standard package
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
z Fast intrinsic diode
Advantages
z Easy to mount
z Space savings
z High power density
Weight
30 g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
200 V
V
GS(th)
V = V , I = 4 mA
DS GS D
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±200 nA
I
DSS
V =V
DS DSS
V =0V
GS
T
J
=
150°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
V = 15 V, I = 140A
GS D
Pulse test, t 300 µs, duty cycle d 2 %
18 m
14 m
© 2004 IXYS All rights reserved
DS99245(12/04)




IXYS

IXFN140N20P Datasheet Preview

IXFN140N20P Datasheet

PolarHT HiPerFET Power MOSFET

No Preview Available !

Symbol
g
fs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Q
g(on)
Qgs
Q
gd
RthJC
RthCK
IXFN 140N20P
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
V = 10 V; I = 0.5 I , pulse test
DS D D25
50 84
S
VGS = 0 V, VDS = 25 V, f = 1 MHz
7500
1800
280
pF
pF
pF
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A
RG = 3.3 (External)
30 ns
35 ns
150 ns
90 ns
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
240 nC
50 nC
100 nC
0.05
0.18 K/W
K/W
www.DataSheet4U.com
SOT-227B miniBLOC
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. typ. Max.
IS VGS = 0 V
140 A
I Repetitive
SM
280 A
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
1.5 V
t I = 25 A
rr F
-di/dt = 100 A/µs
QRM VR = 100 V
150 ns
0.6 µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2


Part Number IXFN140N20P
Description PolarHT HiPerFET Power MOSFET
Maker IXYS
Total Page 5 Pages
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