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IXFH80N60X2A - Power MOSFET

IXYS

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Datasheet Details

Part number	IXFH80N60X2A
Manufacturer	IXYS
File Size	177.23 KB
Description	Power MOSFET
Datasheet	IXFH80N60X2A-IXYS.pdf

IXFH80N60X2A Product details

Features

International Standard Package.
Low RDS(ON) and QG.
Avalanche Rated.
Low Package Inductance Advantages.
High Power Density.
Easy to Mount.
Space Savings Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5.
ID25, Note 1 Characteristic Values Min. Typ. Max. 600 V 3.5 5.0 V .

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Published: Nov 2, 2020 |