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IXYS

IXFH69N30P Datasheet Preview

IXFH69N30P Datasheet

PolarHT HiPerFET Power MOSFET

No Preview Available !

PolarHTTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
IXFH69N30P
IXFK69N30P
VDSS
ID25
RDS(on)
trr
= 300 Vwww.DataSheet4U.com
= 69 A
= 49 m
200 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247
TO-264
Maximum Ratings TO-247 (IXFH)
300 V
300 V
±20 V
±30 V
GDS
69 A TO-264 (IXFK)
200 A
69 A
50 mJ
1.5 J
10 V/ns
GDS
D (TAB)
D (TAB)
500
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
10 g
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
z Fast intrinsic diode
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
300 V
VGS(th)
VDS = VGS, ID = 250µA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
49 m
Advantages
z Easy to mount
z Space savings
z High power density
© 2004 IXYS All rights reserved
DS99220(12/04)




IXYS

IXFH69N30P Datasheet Preview

IXFH69N30P Datasheet

PolarHT HiPerFET Power MOSFET

No Preview Available !

Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless
Min.
otherwise specified)
Typ. Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
30 48
4960
760
190
S
pF
pF
pF
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 4 (External)
25 ns
25 ns
75 ns
27 ns
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
156 180 nC
32 nC
79 nC
(TO-247)
(TO-264)
0.21
0.15
0.25 K/W
K/W
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless
Min.
otherwise
typ.
specified)
Max.
IS VGS = 0 V
ISM Repetitive
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
69 A
200 A
1.5 V
trr IF = 25 A
-di/dt = 100 A/µs
QRM VR = 100 V
100 200 ns
500 nC
IXFH 69N30P
IXFK 69N30P
TO-247 AD Outline www.DataSheet4U.com
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
AA12
2.2 2.54
2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-264 AA Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min. Max.
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
0.00
20.32
2.29
3.17
0.25
20.83
2.59
3.66
6.07 6.27
8.38 8.69
3.81 4.32
1.78 2.29
6.04 6.30
1.57 1.83
Inches
Min. Max.
.190 .202
.100 .114
.079 .083
.044 .056
.094 .106
.114 .122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800 .820
.090 .102
.125 .144
.239 .247
.330 .342
.150 .170
.070 .090
.238 .248
.062 .072
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2


Part Number IXFH69N30P
Description PolarHT HiPerFET Power MOSFET
Maker IXYS
Total Page 5 Pages
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