IXFH16N90 Datasheet, IXYS

l l l l l l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package i.

Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 900 2.0 4.5 ±100 TJ .

IXFH16N90Q

IXFH16N120P

IXFH16N50P

IXFH16N80P

IXFH160N15T

IXFH160N15T2

IXFH100N25P

IXFH102N15T

IXFH10N100

IXFH10N60

IXFH10N65

IXFH10N80P

IXFH10N90