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IXER20N120 - IGBT

Key Features

  • NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits.
  • HiPerFRED™ diode - fast reverse recovery - low operating forward voltage - low leakage current.
  • ISOPLUS247™ package - isolated back surface - low coupling capacity between pins and heatsink - high reliability - industry standard outline.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXER20N120D1 IGBT
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NPT3 IGBT in ISOPLUS247™ IXER 20N120 IXER 20N120D1 IC25 = 36 A VCES = 1200 V V = CE(sat)typ 2.4 V C C ISOPLUS247™ G G E IXER 20N120 E IXER 20N120D1 G C E G = Gate  Isolated Backside C = Collector E = Emitter IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VGE = ±15 V; RG = 68 W; TVJ = 125°C RBSOA Clamped inductive load; L = 100 µH VCE = 900 V; VGE = ±15 V; RG = 68 W TVJ = 125°C; non-repetitive TC = 25°C Maximum Ratings 1200 V ± 20 V 29 A 19 A 40 A VCES 10 µs 130 W Symbol VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC RthCH Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 20 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 0.