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IS67WVS16M8FALL Datasheet 128Mb SerialRAM

Manufacturer: ISSI (now Infineon)

Download the IS67WVS16M8FALL datasheet PDF. This datasheet also includes the IS66WVS16M8FALL variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IS66WVS16M8FALL-ISSI.pdf) that lists specifications for multiple related part numbers.

General Description

The IS66/67WVS16M8FALL/BLL are integrated memory device containing 128Mb Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 16M words by 8 bits.

The device is a dual die stack of two 64Mb die.

The device supports SPI (Serial Peripheral Interface) & QPI (Quad Peripheral Interface) protocols, Very Low Signal Count (6 signal pins;

Overview

IS66WVS16M8FALL/BLL IS67WVS16M8FALL/BLL 128Mb SerialRAM 1.8V/3.0V, 104MHZ, SPI & QPI PROTOCOL ADVANCED DATA SHEET 128Mb SerialRAM 1.8V/3.

Key Features

  • Industry Standard Serial Interface - SPI Protocol: 1-1-1 & 1-4-4 operation - QPI protocol: 4-4-4 operation - Low Signal Counts :6 Signal pins (CE#, CLK, SIO0~SIO3) - Dual stack die of two 64Mb.
  • High Performance - Clock Rate: 33MHz(max) for normal read 104MHz(max) for fast read - Page Size: 1024 Byte - Configurable Wrapped Burst Length: 32 and 1024 (Default=1024) - Always Wrapped Burst Operation within page. - Die Boundary Crossing is not allowed during Wrapped Burst operation.

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