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IS67WVS16M8FBLL - 128Mb SerialRAM

This page provides the datasheet information for the IS67WVS16M8FBLL, a member of the IS66WVS16M8FALL 128Mb SerialRAM family.

Datasheet Summary

Description

The IS66/67WVS16M8FALL/BLL are integrated memory device containing 128Mb Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 16M words by 8 bits.

The device is a dual die stack of two 64Mb die.

Features

  • Industry Standard Serial Interface - SPI Protocol: 1-1-1 & 1-4-4 operation - QPI protocol: 4-4-4 operation - Low Signal Counts :6 Signal pins (CE#, CLK, SIO0~SIO3) - Dual stack die of two 64Mb.
  • High Performance - Clock Rate: 33MHz(max) for normal read 104MHz(max) for fast read - Page Size: 1024 Byte - Configurable Wrapped Burst Length: 32 and 1024 (Default=1024) - Always Wrapped Burst Operation within page. - Die Boundary Crossing is not allowed during Wrapped Burst operation.

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Datasheet preview – IS67WVS16M8FBLL

Datasheet Details

Part number IS67WVS16M8FBLL
Manufacturer ISSI
File Size 697.81 KB
Description 128Mb SerialRAM
Datasheet download datasheet IS67WVS16M8FBLL Datasheet
Additional preview pages of the IS67WVS16M8FBLL datasheet.

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Full PDF Text Transcription

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IS66WVS16M8FALL/BLL IS67WVS16M8FALL/BLL 128Mb SerialRAM 1.8V/3.0V, 104MHZ, SPI & QPI PROTOCOL ADVANCED DATA SHEET 128Mb SerialRAM 1.8V/3.0V, 104MHz, SPI & QPI Protocol RAMFEATURES • Industry Standard Serial Interface - SPI Protocol: 1-1-1 & 1-4-4 operation - QPI protocol: 4-4-4 operation - Low Signal Counts :6 Signal pins (CE#, CLK, SIO0~SIO3) - Dual stack die of two 64Mb • High Performance - Clock Rate: 33MHz(max) for normal read 104MHz(max) for fast read - Page Size: 1024 Byte - Configurable Wrapped Burst Length: 32 and 1024 (Default=1024) - Always Wrapped Burst Operation within page. - Die Boundary Crossing is not allowed during Wrapped Burst operation. - Drive Strength: 50ohm • Low Power Consumption - Single 1.65V to 1.95V Voltage Supply - Single 2.7V to 3.
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