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IS66WVQ4M4DALL - 1.8V/3.0V SERIAL PSRAM MEMORY

General Description

The IS66/67WVQ4M4DALL/BLL are integrated memory device containing 16Mb Pseudo Static Random Access Memory, using a self-refresh DRAM array organized as 4M words by 4 bits.

The device supports Quad DDR interface, which is compatible with JEDEC standard x4 xSPI Flash.

Key Features

  • Industry Standard Serial Interface - Quad DDR (x4 xSPI) Interface: Command (1 byte) =SDR Address (2-byte) & Data = DDR - Low Signal Counts :7 Signal pins (CS#, SCLK, DQSM, SIO0~SIO3).
  • High Performance - Double Data Rate (DDR) Operation: 200MHz (200MB/s) at 1.8V VCC 166MHz (166MB/s) at 3.0V VCC - Source Synchronous Output signal during Read Operation (DQSM) - Data Mask during Write Operation (DQSM) - Configurable Latency for Read/Write Operation - Supports Variable Latency mode.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS66WVQ4M4DALL/BLL IS67WVQ4M4DALL/BLL 16Mb QUADRAM 1.8V/3.0V SERIAL PSRAM MEMORY WITH 200MHZ QUAD DDR (X4 XSPI INTERFACE) PROTOCOL DATA SHEET IS66/67WVQ4M4DALL/BLL 16Mb QUADRAM SERIAL PSRAM MEMORY WITH 200MHz QUAD DDR (x4 xSPI) Interface FEATURES • Industry Standard Serial Interface - Quad DDR (x4 xSPI) Interface: Command (1 byte) =SDR Address (2-byte) & Data = DDR - Low Signal Counts :7 Signal pins (CS#, SCLK, DQSM, SIO0~SIO3) • High Performance - Double Data Rate (DDR) Operation: 200MHz (200MB/s) at 1.8V VCC 166MHz (166MB/s) at 3.