IS65WV12816EBLL ram equivalent, ultra low power cmos static ram.
* High-speed access time: 45ns, 55ns
* CMOS low power operation
– 36 mW (typical) operating
– 9 µW (typical) CMOS standby
* TT.
where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system o.
The ISSI IS62/65WV12816EALL/EBLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yi.
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