IS64WV1288DBLS Datasheet | ISSI

FEATURES HIGH SPEED: (IS63/64WV1288DALL/DBLL) - High-speed access time: 8, 10, 12, 20 ns - Low Active Power: 135 m W (typical) - Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS63/64WV1288DALS/DBLS) - High-speed access time: 25, 35 ns - Low Active Power: 55 m W (typical) - Low Standby Power: 12 µW (typical) CMOS standby - Single power supply - Vdd 1.65V to 2.2V (IS63WV1288DAxx) - Vdd 2.4V to 3.6V (IS63/64WV1288DBxx) - Multiple center power and ground pins for greater noise immunity - Easy memory expansion with CE and OE options - CE power-down - Fully static operation: no clock or refresh required - TTL patible inputs and outputs - Lead-free available DESCRIPTION The ISSI IS63/64WV1288Dxxx is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM. The IS63/64WV1288DBLL is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 25 µW (typical) with CMOS input levels. The IS63/64WV1288DBLL operates from a single Vdd power supply. The IS63/64WV1288Dxxx is available in 32-pin TSOP (Type II), 32-pin s TSOP (Type I), 48-Ball mini BGA (6mm x 8mm) and 32-pin SOJ (300-mil) packages. FUNCTIONAL BLOCK DIAGRAM A0-A16 VDD GND I/O0-I/O7 DECODER 128K X 8 MEMORY ARRAY I/O DATA CIRCUIT COLUMN I/O CE OE WE CONTROL CIRCUIT Copyright © 2021 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated...