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IS62C1024 - 128K x 8 HIGH-SPEED CMOS STATIC RAM

Description

The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM.

performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

Features

  • High-speed access time: 35, 45, 55, 70 ns.
  • Low active power: 450 mW (typical).
  • Low standby power: 500 µW (typical) CMOS standby.
  • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS62C1024AL 128K x 8 LOW POWER CMOS STATIC RAM
IS62C256 32K x 8 LOW POWER CMOS STATIC RAM
IS62C25616BL 256K x 16 HIGH-SPEED CMOS STATIC RAM
IS62C25616EL ULTRA LOW POWER CMOS STATIC RAM
IS62C5128BL 512K x 8 HIGH-SPEED CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IISS626C210C241024 128K x 8 HIGH-SPEED CMOS STATIC RAM ISSIISSI®® JULY 1996 FEATURES • High-speed access time: 35, 45, 55, 70 ns • Low active power: 450 mW (typical) • Low standby power: 500 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V (±10%) power supply DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSI's high- performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.
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