IS61WV6416DBLL ram equivalent, 64k x 16 high speed asynchronous cmos static ram.
HIGH SPEED: (IS61/64WV6416DALL/DBLL)
* High-speed access time: 8, 10, 12, 20 ns
* Low Active Power: 135 mW (typical)
* Low Standby Power: 12 µW (typical)
CMOS.
where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system o.
The ISSI IS61WV6416DAxx/DBxx and IS64WV6416DBxx
are high-speed, 1,048,576-bit static RAMs organized as
65,536 words by 16 bits. It is fabricated using ISSI's high-
performance CMOS technology.This highly reliable process coupled with innovative circu.
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