Part IS61WV6416DBLS
Description 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
Manufacturer ISSI
Size 657.52 KB
ISSI
IS61WV6416DBLS

Overview

  • High-speed access time: 8, 10, 12, 20 ns
  • Low Active Power: 135 mW (typical)
  • Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS61/64WV6416DALS/DBLS)
  • High-speed access time: 25, 35 ns
  • Low Active Power: 55 mW (typical)
  • Low Standby Power: 12 µW (typical) CMOS standby
  • Single power supply - Vdd 1.65V to 2.2V (IS61WV6416DAxx) - Vdd 2.4V to 3.6V (IS61/64WV6416DBxx)
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes