IS61WV6416DBLS
FEATURES
HIGH SPEED: (IS61/64WV6416DALL/DBLL)
- High-speed access time: 8, 10, 12, 20 ns
- Low Active Power: 135 m W (typical)
- Low Standby Power: 12 µW (typical)
CMOS standby LOW POWER: (IS61/64WV6416DALS/DBLS)
- High-speed access time: 25, 35 ns
- Low Active Power: 55 m W (typical)
- Low Standby Power: 12 µW (typical)
CMOS standby
- Single power supply
- Vdd 1.65V to 2.2V (IS61WV6416DAxx)
- Vdd 2.4V to 3.6V (IS61/64WV6416DBxx)
- Fully static operation: no clock or refresh required
- Three state outputs
- Data control for upper and lower bytes
- Industrial and Automotive temperature support
- Lead-free available
DESCRIPTION
The ISSI IS61WV6416DAxx/DBxx and IS64WV6416DBxx are high-speed, 1,048,576-bit static RAMs organized as
65,536 words by 16 bits. It is fabricated using ISSI's high- performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
When CE is HIGH (deselected), the...
