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IS61WV6416DBLS - 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

Download the IS61WV6416DBLS datasheet PDF. This datasheet also covers the IS61WV6416DALL variant, as both devices belong to the same 64k x 16 high speed asynchronous cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

65,536 words by 16 bits.

Key Features

  • HIGH SPEED: (IS61/64WV6416DALL/DBLL).
  • High-speed access time: 8, 10, 12, 20 ns.
  • Low Active Power: 135 mW (typical).
  • Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS61/64WV6416DALS/DBLS).
  • High-speed access time: 25, 35 ns.
  • Low Active Power: 55 mW (typical).
  • Low Standby Power: 12 µW (typical) CMOS standby.
  • Single power supply.
  • Vdd 1.65V to 2.2V (IS61WV6416DAxx).
  • Vdd 2.4V to 3.6V (IS61/64WV6416DBxx).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS61WV6416DALL-ISSI.pdf) that lists specifications for multiple related part numbers.

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61WV6416DBLL 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV6416DALL 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV6416DALS 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV6416BLL 64K x 16 HIGH-SPEED CMOS STATIC RAM
IS61WV6416EEBLL 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV102416ALL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC
IS61WV102416BLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC
IS61WV102416DALL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV102416DBLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV102416FALL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS61WV6416DALL/DALS IS61WV6416DBLL/DBLS IS64WV6416DBLL/DBLS 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM MARCH 2020 FEATURES HIGH SPEED: (IS61/64WV6416DALL/DBLL) • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical) • Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS61/64WV6416DALS/DBLS) • High-speed access time: 25, 35 ns • Low Active Power: 55 mW (typical) • Low Standby Power: 12 µW (typical) CMOS standby • Single power supply — Vdd 1.65V to 2.2V (IS61WV6416DAxx) — Vdd 2.4V to 3.