IS61WV3216DBLS ram equivalent, 32k x 16 high speed asynchronous cmos static ram.
HIGH SPEED: (IS61/64WV3216DBLL)
* High-speed access time: 8, 10, 12, 20 ns
* Low Active Power: 135 mW (typical)
* Low Standby Power: 12 µW (typical)
CMOS stan.
where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system o.
The ISSI IS61WV3216DBLx and IS64WV3216DBLx
are high-speed, 524,288-bit static RAMs organized as
32,768 words by 16 bits. It is fabricated using ISSI's high-
performance CMOS technology.This highly reliable process coupled with innovative circuit desi.
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