IS64WV3216BLL Datasheet PDF - ISSI (IS61WV3216BLL / IS64WV3216BLL) 32K x 16 HIGH-SPEED CMOS STATIC RAM Specs

IS64WV3216BLL - (IS61WV3216BLL / IS64WV3216BLL) 32K x 16 HIGH-SPEED CMOS STATIC RAM

Datasheet Summary

Description

static RAM organized as 32,768 words by 16 bits.

It is fabricated using ISSI 's high-performance CMOS technology.

Features

High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V-3.6V.
CMOS low power operation: 50 mW (typical) operating 25 µW (typical) standby.
TTL compatible interface levels.
Fully static operation: no clock or refresh required.
Three state outputs.
Data control for upper and lower bytes.
Automotive Temperature Available.
Lead-free available.

Datasheet Details

Part number	IS64WV3216BLL
Manufacturer	ISSI
File Size	336.81 KB
Description	(IS61WV3216BLL / IS64WV3216BLL) 32K x 16 HIGH-SPEED CMOS STATIC RAM
Datasheet	IS64WV3216BLL Datasheet
Additional preview pages of the IS64WV3216BLL datasheet.

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www.DataSheet4U.com IS64WV3216BLL IS61WV3216BLL 32K x 16 HIGH-SPEED CMOS STATIC RAM ISSI NOVEMBER 2005 ® FEATURES • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V-3.6V • CMOS low power operation: 50 mW (typical) operating 25 µW (typical) standby • TTL compatible interface levels • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Automotive Temperature Available • Lead-free available DESCRIPTION The ISSI IS61/64WV3216BLL is a high-speed, 524,288-bit static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSI 's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12ns (3.3V + 10%) and 15ns (2.5V-3.

Published: Aug 16, 2006 |