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IS61WV3216DBLL Datasheet 32K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

Manufacturer: ISSI (now Infineon)

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General Description

The ISSI IS61WV3216DBLx and IS64WV3216DBLx are high-speed, 524,288-bit static RAMs organized as 32,768 words by 16 bits.

It is fabricated using ISSI's high- performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.

Overview

IS61WV3216DBLL/DBLS IS64WV3216DBLL/DBLS 32K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM MARCH.

Key Features

  • HIGH SPEED: (IS61/64WV3216DBLL).
  • High-speed access time: 8, 10, 12, 20 ns.
  • Low Active Power: 135 mW (typical).
  • Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS61/64WV3216DBLS).
  • High-speed access time: 25, 35 ns.
  • Low Active Power: 55 mW (typical).
  • Low Standby Power: 12 µW (typical) CMOS standby.
  • Single power supply.
  • Vdd 2.4V to 3.6V (IS61/64WV3216DBxx).
  • Fully static operation: no clock or refresh requir.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS61WV3216DBLS 32K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV3216BLL (IS61WV3216BLL / IS64WV3216BLL) 32K x 16 HIGH-SPEED CMOS STATIC RAM
IS61WV102416ALL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC
IS61WV102416BLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC
IS61WV102416DALL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
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