IS61WV25616EDBLL ram equivalent, 256k x 16 high speed asynchronous cmos static ram.
* High-speed access time: 8, 10 ns
* Low Active Power: 85 mW (typical)
* Low Standby Power: 7 mW (typical)
CMOS standby
* Single power supply
— Vdd 2.4V t.
where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system o.
The ISSI IS61/64WV25616EDBLL is a high-speed,
4,194,304-bit static RAMs organized as 262,144 words
by 16 bits. It is fabricated using ISSI's high-performance
CMOS technology. This highly reliable process coupled with innovative circuit design techniq.
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