IS61WV25616EDALL ram equivalent, 256k x 16 high speed asynchronous cmos static ram.
* High-speed access time: 20ns
* Single power supply
– 1.65V-2.2V VDD
* Low Standby Current:1.5mA (typical)
* Fully static operation: no c.
where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system o.
The ISSI IS61WV25616EDALL are high-speed, low power, 4M bit static RAMs organized as 256K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability.
When CS# is HIGH (deselect.
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