IS61WV10248EDBLL ram equivalent, 1m x 8 high-speed asynchronous cmos static ram.
* High-speed access times: 8, 10, 20 ns
* High-performance, low-power CMOS process
* Multiple center power and ground pins for
greater noise immunity
*.
where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system o.
The ISSI IS61/64WV10248EDBLL are very high-speed,
low power, 1M-word by 8-bit CMOS static RAM. The
IS61/64WV10248EDBLL are fabricated using ISSI's
high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t.
Image gallery
TAGS
Download (Size : 428.70KB)