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IS61WV10248ALL - 1M x 8 HIGH-SPEED CMOS STATIC RAM

General Description

are very high-speed, low power, 1M-word by 8-bit CMOS static RAM.

performance CMOS technology.

Key Features

  • High-speed access times: 8, 10, 20 ns.
  • High-performance, low-power CMOS process.
  • Multiple center power and ground pins for greater noise immunity.
  • Easy memory expansion with CE and OE options.
  • CE power-down.
  • Fully static operation: no clock or refresh required.
  • TTL compatible inputs and outputs.
  • Single power supply.
  • VDD 1.65V to 2.2V (IS61WV10248ALL) speed = 20ns for Vcc = 1.65V to 2.2V.
  • VDD 2.4V to 3.6V (.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61WV10248BLL 1M x 8 HIGH-SPEED CMOS STATIC RAM
IS61WV10248EDBLL 1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
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IS61WV102416ALL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS61WV10248ALL IS61WV10248BLL IS64WV10248BLL 1M x 8 HIGH-SPEED CMOS STATIC RAM JUNE 2008 FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply – VDD 1.65V to 2.2V (IS61WV10248ALL) speed = 20ns for Vcc = 1.65V to 2.2V – VDD 2.4V to 3.6V (IS61/64WV10248BLL) speed = 10ns for Vcc = 2.4V to 3.6V speed = 8ns for Vcc = 3.