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IS46DR81280DL - 128Mx8 DDR2 DRAM

Download the IS46DR81280DL datasheet PDF. This datasheet also covers the IS46DR81280D variant, as both devices belong to the same 128mx8 ddr2 dram family and are provided as variant models within a single manufacturer datasheet.

General Description

ISSI's 1Gb DDR2 SDRAM uses a double-data-rate architecture to achieve high-speed operation.

The double-data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls.

Key Features

  • Standard Voltage: Vdd and Vddq = 1.8V ±0.1V.
  • Low Voltage (L): Vdd and Vddq = 1.5V ±0.075V.
  • SSTL_18-compatible for Standard Voltage.
  • SSTL_15-compatible for Low Voltage.
  • Double data rate interface: two data transfers per clock cycle.
  • Differential data strobe (DQS, DQS).
  • 4-bit prefetch architecture.
  • On chip DLL to align DQ and DQS transitions with CK.
  • 8 internal banks for concurrent operation.
  • Programmable CA.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS46DR81280D-ISSI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IS46DR81280DL (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IS46DR81280DL. For precise diagrams, and layout, please refer to the original PDF.

IS43/46DR81280D, IS43/46DR81280DL IS43/46DR16640D, IS43/46DR16640DL 128Mx8, 64Mx16 DDR2 DRAM FEATURES • Standard Voltage: Vdd and Vddq = 1.8V ±0.1V • Low Voltage (L): Vdd...

View more extracted text
S • Standard Voltage: Vdd and Vddq = 1.8V ±0.1V • Low Voltage (L): Vdd and Vddq = 1.5V ±0.

More Datasheets from ISSI (now Infineon)

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