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IS45RM32160E - 4M x 32Bits x 4Banks Mobile Synchronous DRAM

Download the IS45RM32160E datasheet PDF. This datasheet also covers the IS42SM32160E variant, as both devices belong to the same 4m x 32bits x 4banks mobile synchronous dram family and are provided as variant models within a single manufacturer datasheet.

Description

These IS42/45SM/RM/VM32160E are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits.

These products are offering fully synchronous operation and are referenced to a positive edge of the clock.

Features

  • JEDEC standard 3.3V, 2.5V, 1.8V power supply.
  • Auto refresh and self refresh.
  • All pins are compatible with LVCMOS interface.
  • 8K refresh cycle every 16ms (A2 grade) or 64 ms (Industrial, A1 grade).
  • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst.
  • Programmable CAS Latency : 2, 3 clocks.
  • All inputs and outputs referenced to the positive edge of the system clock.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS42SM32160E-ISSI.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS45RM32100D 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS45RM32200M 512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS45RM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45RM32400H 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45RM32800E 2M x 32Bits x 4Banks Mobile Synchronous DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS42/45SM/RM/VM32160E 4M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32160E are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS. Features  JEDEC standard 3.3V, 2.5V, 1.
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