Datasheet4U Logo Datasheet4U.com

IS43TR16640BL - 1Gb DDR3 SDRAM

Download the IS43TR16640BL datasheet PDF. This datasheet also covers the IS43TR16640B variant, as both devices belong to the same 1gb ddr3 sdram family and are provided as variant models within a single manufacturer datasheet.

Description

CS# ODT RAS#.

CAS#.

Clock: CK and CK# are differential clock inputs.

Features

  • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V.
  • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V.
  • High speed data transfer rates with system frequency up to 1066 MHz.
  • 8 internal banks for concurrent operation.
  • 8n-bit pre-fetch architecture.
  • Programmable CAS Latency.
  • Programmable Additive Latency: 0, CL-1,CL-2.
  • Programmable CAS WRITE latency (CWL) based on tCK.
  • Programmable Burst Length: 4 and 8.
  • Programmable Bu.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS43TR16640B-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS431 (IS431 / IS432) TOTEM POLE OUTPUT TYPE OPIC LIGHT DETECTOR Sharp Electrionic Components
IS432 (IS431 / IS432) TOTEM POLE OUTPUT TYPE OPIC LIGHT DETECTOR Sharp Electrionic Components
IS435 BUILT IN AMP TYPE LIGHT DETECTOR Sharp Electrionic Components
IS436 BUILT IN AMP TYPE LIGHT DETECTOR Sharp Electrionic Components
IS437 (IS437 / IS438) TYPE OPIC LIGHT DETECTOR Sharp Electrionic Components

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS43TR16640B 1Gb DDR3 SDRAM
IS43TR16640ED 1Gb DDR3 SDRAM
IS43TR16128B 2Gb DDR3 SDRAM
IS43TR16128BL 2Gb DDR3 SDRAM
IS43TR16128C 2Gb DDR3 SDRAM

Full PDF Text Transcription

Click to expand full text
IS43/46TR16640B, IS43/46TR16640BL IS43/46TR81280B, IS43/46TR81280BL 128MX8, 64MX16 1Gb DDR3 SDRAM FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 1066 MHz  8 internal banks for concurrent operation  8n-bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable CAS WRITE latency (CWL) based on tCK  Programmable Burst Length: 4 and 8  Programmable Burst Sequence: Sequential or Interleave  BL switch on the fly  Auto Self Refresh(ASR)  Self Refresh Temperature(SRT) OPTIONS  Configuration: 128Mx8 64Mx16  Package: 96-ball FBGA (9mm x 13mm) for x16 78-ball FBGA (8mm x 10.
Published: |