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IS43TR16640ED - 1Gb DDR3 SDRAM

Description

RAS#.

CAS#.

Features

  • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V.
  • High speed data transfer rates with system frequency up to 800 MHz.
  • 8 internal banks for concurrent operation.
  • 8n-bit pre-fetch architecture.
  • Programmable CAS Latency.
  • Programmable Additive Latency: 0, CL-1,CL-2.
  • Programmable CAS WRITE latency (CWL) based on tCK.
  • Programmable Burst Length: 4 and 8.
  • Programmable Burst Sequence: Sequential or Interleave.
  • BL switch on the fly.
  • Auto Self Refresh(A.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS43TR16640B 1Gb DDR3 SDRAM
IS43TR16640BL 1Gb DDR3 SDRAM
IS43TR16128B 2Gb DDR3 SDRAM
IS43TR16128BL 2Gb DDR3 SDRAM
IS43TR16128C 2Gb DDR3 SDRAM

Full PDF Text Transcription

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IS43/46TR16640ED IS43/46TR81280ED 128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  High speed data transfer rates with system frequency up to 800 MHz  8 internal banks for concurrent operation  8n-bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable CAS WRITE latency (CWL) based on tCK  Programmable Burst Length: 4 and 8  Programmable Burst Sequence: Sequential or Interleave  BL switch on the fly  Auto Self Refresh(ASR)  Self Refresh Temperature(SRT) ECC  Single bit error correction (per 64-bits)  Restrictions on Burst Length and Data Mask OPTIONS  Configuration: 128Mx8 64Mx16  Package: 96-ball FBGA (9mm x 13mm) for x16 78-ball FBGA (8mm x 10.
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