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IS43LR16400B

IS43LR16400B is 1M x 16Bits x 4Banks Mobile DDR SDRAM manufactured by ISSI.
IS43LR16400B datasheet preview

IS43LR16400B Datasheet

Part number IS43LR16400B
Download IS43LR16400B Datasheet (PDF)
File Size 1.13 MB
Manufacturer ISSI
Description 1M x 16Bits x 4Banks Mobile DDR SDRAM
IS43LR16400B page 2 IS43LR16400B page 3

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IS43LR16400B Distributor

IS43LR16400B Description

This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a 16-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins.

IS43LR16400B Key Features

  • JEDEC standard 1.8V power supply
  • VDD = 1.8V, VDDQ = 1.8V
  • Four internal banks for concurrent operation
  • MRS cycle with address key programs
  • CAS latency 2, 3 (clock)
  • Burst length (2, 4, 8, 16)
  • Burst type (sequential & interleave)
  • Fully differential clock inputs (CK, /CK)
  • All inputs except data & DM are sampled at the rising edge of the system clock
  • Data I/O transaction on both edges of data strobe

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