IS43LR16200D Datasheet | ISSI

IS43/46LR16200D 1M x 16Bits x 2Banks Mobile DDR SDRAM Description The IS43LR16200D is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 2n-bits prefetched to achieve high bandwidth. All input and output voltage levels are patible with LVCMOS. Features - JEDEC standard 1.8V power supply - Two internal banks for concurrent operation - MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave) - Fully differential clock inputs (CK, /CK) - All inputs except data & DM are sampled at the rising edge of the system clock - Data I/O transaction on both edges of data strobe - Bidirectional data strobe per byte of data (DQS) - DM for write masking only - Edge aligned data & data strobe output - Center aligned data & data strobe input - 64ms refresh period (4K cycle) - Auto & self refresh - Concurrent Auto Precharge - Maximum clock frequency up to 166MHz - Maximum data rate up to 333Mbps/pin - Power Saving support - PASR (Partial Array Self Refresh) - Auto TCSR (Temperature pensated Self Refresh) - Deep Power Down Mode - Programmable Driver Strength Control by Full Strength or 3/4, 1/2, 1/4, 1/8 of Full Strength - LVCMOS patible inputs/outputs Copyright © 2017 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its p roducts at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services de scribed herein....