IS43LR16200D
Description
The IS43LR16200D is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 2n-bits prefetched to achieve high bandwidth. All input and output voltage levels are patible with LVCMOS.
Features
- JEDEC standard 1.8V power supply
- Two internal banks for concurrent operation
- MRS cycle with address key programs
- CAS latency 2, 3 (clock)
- Burst length (2, 4, 8, 16)
- Burst type (sequential & interleave)
- Fully differential clock inputs (CK, /CK)
- All inputs except data & DM are sampled at the rising edge of the system clock
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