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IS43DR16640DL - 64Mx16 DDR2 DRAM

Download the IS43DR16640DL datasheet PDF. This datasheet also covers the IS46DR81280D variant, as both devices belong to the same 64mx16 ddr2 dram family and are provided as variant models within a single manufacturer datasheet.

Description

ISSI's 1Gb DDR2 SDRAM uses a double-data-rate architecture to achieve high-speed operation.

The double-data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls.

Features

  • Standard Voltage: Vdd and Vddq = 1.8V ±0.1V.
  • Low Voltage (L): Vdd and Vddq = 1.5V ±0.075V.
  • SSTL_18-compatible for Standard Voltage.
  • SSTL_15-compatible for Low Voltage.
  • Double data rate interface: two data transfers per clock cycle.
  • Differential data strobe (DQS, DQS).
  • 4-bit prefetch architecture.
  • On chip DLL to align DQ and DQS transitions with CK.
  • 8 internal banks for concurrent operation.
  • Programmable CA.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS46DR81280D-ISSI.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS43DR16640D 64Mx16 DDR2 DRAM
IS43DR16640B 1Gb DDR2 SDRAM
IS43DR16640BL 1Gb DDR2 SDRAM
IS43DR16640C DDR2 DRAM
IS43DR16128C DDR2 DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS43/46DR81280D, IS43/46DR81280DL IS43/46DR16640D, IS43/46DR16640DL 128Mx8, 64Mx16 DDR2 DRAM FEATURES • Standard Voltage: Vdd and Vddq = 1.8V ±0.1V • Low Voltage (L): Vdd and Vddq = 1.5V ±0.
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