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IS43DR16640C - DDR2 DRAM

This page provides the datasheet information for the IS43DR16640C, a member of the IS43DR81280C DDR2 DRAM family.

Datasheet Summary

Description

architecture to achieve high-speed operation.

data words per clock cycle at the I/O balls.

Features

  • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V.
  • JEDEC standard 1.8V I/O (SSTL_18-compatible).
  • Double data rate interface: two data transfers per clock cycle.
  • Differential data strobe (DQS, DQS).
  • 4-bit prefetch architecture.
  • On chip DLL to align DQ and DQS transitions with CK.
  • 8 internal banks for concurrent operation.
  • Programmable CAS latency (CL) 3, 4, 5, 6 and 7 supported.
  • Posted CAS and programmable additive laten.

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Datasheet preview – IS43DR16640C

Datasheet Details

Part number IS43DR16640C
Manufacturer ISSI
File Size 872.14 KB
Description DDR2 DRAM
Datasheet download datasheet IS43DR16640C Datasheet
Additional preview pages of the IS43DR16640C datasheet.

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Full PDF Text Transcription

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IS43/46DR81280C IS43/46DR16640C 128Mx8, 64Mx16 DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.
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