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IS42S32200 - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

Description

A0-A10 Address Input BA0, BA1 Bank Select Address I/O0 to I/O31 Data I/O CLK System Clock Input CKE CS Clock Enable Chip Select RAS Row Address Strobe Command CAS WE Column A

Features

  • Clock frequency: 166, 143 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access/precharge.
  • Single 3.3V power supply.
  • LVTTL interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave.
  • Self refresh modes.
  • 4096 refresh cycles every 64 ms.
  • Random column address every clock cycle.
  • Prog.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS42S32200E SYNCHRONOUS DYNAMIC RAM
IS42S32200L 64-MBIT SYNCHRONOUS DYNAMIC RAM
IS42S32200N 64-MBIT SYNCHRONOUS DYNAMIC RAM
IS42S32160D 512Mb SDRAM
IS42S32160F 512Mb SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS42S32200 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM ISSI® PRELIMINARY INFORMATION August 2003 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single 3.
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