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IS42RM32400H - 1M x 32Bits x 4Banks Mobile Synchronous DRAM

Download the IS42RM32400H datasheet PDF. This datasheet also covers the IS42VM32400H variant, as both devices belong to the same 1m x 32bits x 4banks mobile synchronous dram family and are provided as variant models within a single manufacturer datasheet.

Description

These IS42/45SM/RM/VM32400H are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits.

These products are offering fully synchronous operation and are referenced to a positive edge of the clock.

Features

  • JEDEC standard 3.3V, 2.5V, 1.8V power supply.
  • Auto refresh and self refresh.
  • All pins are compatible with LVCMOS interface.
  • 4K refresh cycle / 64ms.
  • Programmable Burst Length and Burst Type.
  • 1, 2, 4, 8 or Full Page for Sequential Burst.
  • 4 or 8 for Interleave Burst.
  • Programmable CAS Latency : 2,3 clocks.
  • All inputs and outputs referenced to the positive edge of the system clock.
  • Data mask function by DQM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS42VM32400H-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS42RM32400E 128Mb Mobile Synchronous DRAM
IS42RM32400F 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32100C 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42RM32100D 512K x 32Bits x 2Banks Low Power Synchronous DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS42/45SM/RM/VM32400H 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32400H are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS. Features  JEDEC standard 3.3V, 2.5V, 1.
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