Download the IS35ML04G084 datasheet PDF.
This datasheet also covers the IS34ML04G084 variant, as both devices belong to the same 4gb(x8) 3.3v nand flash memory family and are provided as variant models within a single manufacturer datasheet.
Features
- Flexible & Efficient Memory Architecture
- Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell.
- Highest performance - Read Performance
- Random Read: 25us (Max. ) - Serial Access: 25ns (Max. )
- Write Performance
- Program time: 300us - typical - Block Erase time: 3ms.
- typical.
- Low Power with Wide Temp. Ranges - Single 3.3V (2.7V to 3.6V.